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2N7002K-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated
2N7002K-7 is a Transistors - FETs, MOSFETs - Single model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT23 under the Diodes Incorporated brand listing. MOSFET N-CH 60V 0.38A SOT23-3. TrustCompo combines the available model, brand, hierarchy, and specification details around 2N7002K-7 so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
-
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 60V 0.38A SOT23-3
key Attributes
-
Datasheet
View 2N7002K-7 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
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ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The 2N7002K-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed for low-voltage applications and is widely used in various electronic circuits due to its efficiency and reliability.
Key Features:
- Type: N-channel MOSFET
- Package: The 2N7002K-7 is typically available in a SOT-23 package, which is a small, surface-mount package that allows for efficient use of board space.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of applications that require moderate voltage handling.
- Current Rating: It can handle a continuous drain current (I_D) of up to 200mA, which is adequate for many low-power switching applications.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 0.8V to 3V, allowing it to be driven by low-voltage logic levels.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to lower power losses during operation.
- Switching Speed: The 2N7002K-7 features fast switching capabilities, making it suitable for high-speed applications such as switching power supplies and signal switching.
- Thermal Characteristics: The device has a thermal resistance (RθJA) that allows it to operate efficiently without overheating, provided it is used within its specified limits.
Applications:
The 2N7002K-7 is commonly used in various applications, including:
- Switching Regulators: It can be used in DC-DC converters and other power management circuits.
- Signal Switching: Ideal for switching signals in digital circuits, such as microcontroller outputs.
- Load Switching: Suitable for controlling loads in automotive and industrial applications.
- Relay Replacement: Can be used to replace mechanical relays in low-power applications for faster switching and increased reliability.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 300mW, depending on the thermal management of the PCB.
- Operating Temperature Range: The device can operate in a temperature range from -55°C to +150°C, making it suitable for a variety of environmental conditions.
Conclusion:
The 2N7002K-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for a wide range of electronic circuits.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
HTSUS
8541.21.0095
Export Classifications & Environmental
ECCN Code
EAR99
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Rise Time
3.4ns
Turn-Off Delay Time
15.7 ns
Turn On Delay Time
3.9 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
1997
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Power Dissipation
350mW
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Package / Case
TO-236-3, SC-59, SOT-23-3
Weight
7.994566mg
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Subcategory
FET General Purpose Powers
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Length
2.9mm
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Height
1mm
Number Of Terminations
3
Width
1.3mm
Nominal Vgs
1.6 V
Threshold Voltage
1.6V
Feedback Cap-Max (Crss)
5 pF
Resistance
2Ohm
Continuous Drain Current (ID)
300mA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Rds On (Max) @ Id, Vgs
2 Ω @ 500mA, 10V
Manufacturer'S Part No.
2N7002K-7
Vgs(Th) (Max) @ Id
2.5V @ 1mA
Fall Time (Typ)
9.9 ns
Current - Continuous Drain (Id) @ 25°C
380mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.3nC @ 4.5V
Power Dissipation-Max
370mW Ta
2N7002K-7 cross reference and alternatives
2N7002K-7 replacement and cross-reference parts
Review mapped alternatives for 2N7002K-7 from Diodes Incorporated. Compare replacement type, package, lifecycle, stock, and sourcing context before RFQ or engineering approval.
FunctionalON SemiconductorSOT-23-3
BSS138L
Functional alternative to the obsolete onsemi BSS138L. 2N7002K-7 (Nexperia / Diodes Incorporated) is a 60 V N-channel logic-level enhancement mode MOSFET in SOT-23-3 with the same pinout (1=Gate, 2=Drain, 3=Source). 0.115 A ID and ~3 Ω RDS(on) at Vgs = 10 V. Same logic-level gate drive and small-signal switching application class as BSS138L, but ~2x lower current rating. Use as drop-in when the design's continuous drain current is below 100 mA (level-shifting, load switch, simple analog switches).
Replacement Type
Functional
Lifecycle status
LTB
key Attributes
-
Available Quantity
87,836
Sourcing Signal
Review mapped alternatives for 2N7002K-7 from ON Semiconductor. Compare replacement type, package, lifecycle, stock, and sourcing context before RFQ or engineering approval.
Common questions
Product FAQ
Quick answers for buyers reviewing 2N7002K-7, stock, documentation, and sourcing steps.
What is 2N7002K-7?
2N7002K-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for 2N7002K-7?
2N7002K-7 is listed with package reference SOT23. The current product description is MOSFET N-CH 60V 0.38A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is 2N7002K-7 available in stock?
This page currently shows 38517 units in stock and 82177 units available for 2N7002K-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for 2N7002K-7?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for 2N7002K-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for 2N7002K-7?
Yes. This page links to the datasheet for 2N7002K-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify 2N7002K-7 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for 2N7002K-7 before approving the order.
Transistors - FETs, MOSFETs - Single
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